STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜

使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si(001)衬底上采用分子束外延法生长出Ge_0.975Sn_0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge_0.975Sn_0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge_0.975Sn_0.025合金薄膜在500 ℃下具有很好的热稳定性,有望在Si基光电器件中得到应用. 关键词： GeSn Ge 分子束外延 外延生长     

Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors

Ba_0.5Sr_0.5Ti_0.99Co_0.01O₃ (BSTC) thin films have been fabricated with pulsed laser deposition on Nb-doped SrTiO₃ (STN) substrate. In Pt/BSTC/STN capacitor, we systematically investigated the capacitance, leakage current and polarization versus bias voltage characteristics, and found that curves of capacitance versus voltage and leakage current versus voltage were not symmetric, and polarization hysteresis loop exhibited large relaxation of the remnant polarization at negatively poled state. A detailed analysis of capacitance data demonstrated a difference of the built-in voltage between top Pt/BSTC interface (V_b,t=2.5 V) and bottom BSTC/STN interface (V_b,b=1.1 V). Such different built-in voltages lead to the presence of an internal electric field, which results in asymmetric electric characteristics in Pt/BSTC/STN capacitor.     

AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed.     

Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

In this Letter, bilayered Cu₂O/CuO thin films were grown on Nb doped SrTiO₃ (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current-voltage characteristics of Pt/Cu₂O/CuO/Nb:STO devices show reproducible and pronounced current-voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current-voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage.     

基于微流控技术的蛋白质结晶及其筛选方法的研究进展简

微流控技术以其高通量、低消耗和集成化等优点成为蛋白质结晶微型化研究的重要手段. 本文综述了基于微流控技术的蛋白质结晶技术和方法,主要包括微泵微阀、液滴(Droplet)、滑动芯片(SlipChip)以及液滴实验室(DropLab)等技术. 此外,还针对当前膜蛋白在结构生物学研究中的重要地位,综述了应用于膜蛋白结晶的微流控技术的研究进展.     

High‐perfomance Ce‐doped multicomponent garnet single crystalline film scintillators

We report for the first time the optimized content and excellent scintillation properties of single crystalline film (SCF) scintillators of multicomponent Gd_3–xLu_x Al_5–yGa_y O₁₂:Ce garnet compounds grown by liquid phase epitaxy (LPE) method. The Gd_1.5Lu_1.5Al_2.75Ga_2.25O₁₂:Ce and Gd₃Al_2.75–2Ga_2.25–3O₁₂:Ce SCF show the light yield (LY) comparable with that of high‐quality bulk crystal analogues of these garnets but faster scintillation decay and very low thermoluminescence in the above room temperature range. To our knowledge, these SCF possess the highest LY values ever obtained in LPE grown garnet SCF scintillators exceeding by at least 1.5–1.6 times the values previously reported for SCF scintillators.

     

Formation of Concentrated Nanoemulsions by Extreme Shear

Abstract

We have systematically investigated the production of “nanoemulsions,” droplets of one liquid phase in another immiscible liquid phase that have diameters less than 100 nm. Our approach relies on a combination of extreme shear due to multipass, high‐pressure microfluidic injection and systematic control of the emulsion's composition. By repeatedly shearing a silicone oil‐in‐water emulsion in an inhomogeneous extensional shear flow, the multipass approach enables us to reduce the droplet polydispersity and average radius. Using dynamic light scattering, we study the changes in the average radius, ?a?, as a function of the number of passes, driving injection pressure (i.e., shear rate), droplet volume fraction, surfactant concentration, and droplet oil viscosity. The smallest nanoemulsion that we obtain has ?a?=18 nm. At large droplet volume fractions φ≥0.65, we observe phase inversion, rather than a reduction in the droplet size. This provides evidence that droplet coalescence can occur during extreme shear, even when a significant excess of a strongly stabilizing surfactant is present.     

Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.     

Time evolution of the size distribution of nano-sphere droplets in the hexadecane-in-water miniemulsion stabilized by nonionic surfactants

Time evolutions of the droplet size distribution in miniemulsions, which is constituted of water/n-hexadecane/nonionic surfactants, were investigated by using light scattering techniques. A hard-sphere model is applied to characterize the polydispersity of miniemulsion droplets. Measuring the relative scattering intensity as a function of the volume fraction of dispersed phase, the variance of the droplets size distribution, σ², was evaluated. Miniemulsions developed gradually from monodisperse systems (σ²≅0.02) to polydisperse ones (σ²≥0.13) over 12 days after preparation. σ² increased rapidly in the early stage, and ceased to develop at about 6 days after preparation. The z-average hydrodynamic radius of miniemulsion droplets grew with time over the whole time range. The change with time of the total droplet number of miniemulsion is in agreement with that predicted by Smoluchowski's theory for diffusion-controlled coagulation. Although the characteristic coagulation time obtained here was much larger than that estimated by Smoluchowski's theory, the qualitative agreement between the theory and the experimental results obtained here is good. At the earlier stage of the destabilization process of miniemulsions, the growth mechanism of droplets may be explained in terms of a diffusion-controlled coagulation. Received: 1 April 2000 Accepted: 10 August 2000